Method for manufacturing holographic recording medium and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHideto Ohnuma
Life of this patent
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Abstract
To provide a method for manufacturing a holographic recording medium and a method for manufacturing a semiconductor device, by which effects of distortion or irregularities of the surface of an exposure object can be reduced. The method includes the steps of: splitting a laser beam emitted from a laser oscillator into a first laser beam and a second laser beam, and forming a fringe pattern in a holographic recording medium by illuminating the holographic recording medium with the first laser beam through a mask and illuminating the holographic recording medium with the second laser beam. The mask is a substrate having a light-shielding film formed over its surface.
Claims21
A method for manufacturing a holographic recording medium, comprising the steps of:
- splitting a laser beam emitted from a laser oscillator into a first laser beam and a second laser beam;
- and
- forming a fringe pattern in a holographic recording medium by illuminating the holographic recording medium with the first laser beam through a mask and illuminating the holographic recording medium with the second laser beam,
- wherein the mask is a substrate having a light-shielding film formed over its surface;
- and
- wherein a thickness of the light-shielding film is in a range of 0.3 to 10 μm, inclusive.
A method for manufacturing a semiconductor device, comprising the steps of:
- splitting a laser beam emitted from a first laser oscillator into a first laser beam and a second laser beam;
- forming a fringe pattern in a holographic recording medium by illuminating the holographic recording medium with the first laser beam through a mask and illuminating the holographic recording medium with the second laser beam;
- forming a resist over a film formed over a first substrate;
- and
- illuminating the resist with a third laser beam from a second laser oscillator through the holographic recording medium,
- wherein the mask is a second substrate having a light-shielding film formed over its surface;
- and
- wherein a thickness of the light-shielding film is in a range of 0.3 to 10 μm, inclusive.
A method for manufacturing a semiconductor device, comprising the steps of:
- splitting a laser beam emitted from a first laser oscillator into a first laser beam and a second laser beam;
- forming a fringe pattern in a holographic recording medium by illuminating the holographic recording medium with the first laser beam through a mask and illuminating the holographic recording medium with the second laser beam;
- forming a resist over a film formed over a first substrate;
- and
- illuminating the resist with a third laser beam from a second laser oscillator through the holographic recording medium,
- wherein the mask is a second substrate having a light-shielding film formed over its surface, the light-shielding film having a thickness greater than or equal to a maximum difference in elevation of a surface of the resist.
Dependencies are inferred from the claim text.