Semiconductor optical devices, systems and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-youn Kim, Kyoung-ho Ha, Soo-haeng Cho
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Abstract
A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.
Claims29
A semiconductor optical device comprising:
- a silicon substrate;
- and
- at least one Group III-V semiconductor gain layer formed on the silicon substrate, one of the silicon substrate and the at least one Group III-V semiconductor gain layer having a dispersion Bragg grating formed therein.
A method of manufacturing a semiconductor optical device, the method comprising:
- forming a Group III-V semiconductor gain layer on a silicon substrate;
- and
- forming a dispersion Bragg grating on the silicon substrate or the semiconductor gain layer.
Dependencies are inferred from the claim text.