Semiconductor laser device

Abstract

To provide a semiconductor laser device capable of reducing the power consumption and enhancing the reliability. The semiconductor laser device includes: a crystal substrate; a first clad layer of a first conductivity type formed on the crystal substrate; a first light guide layer of the first conductivity type formed on the first clad layer; an active layer of a single or multiple quantum well structure formed on the first light guide layer; an overflow preventing layer of a second conductivity type formed on the active layer; a second light guide layer of the second conductivity type formed on the overflow preventing layer; and a second clad layer of the second conductivity type formed on the second light guide layer, wherein the carrier concentration of the second light guide layer is set to the carrier concentration or more of the second clad layer.

Dependencies are inferred from the claim text.