Disk laser including an amplified spontaneous emission (ase) suppression feature
AssigneeThe Boeing Company
InventorJan Vetrovec
Life of this patent
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Abstract
A laser system may include a first portion of laser host material adapted for amplification of laser radiation and a second portion of laser host material surrounding the first portion which may be adapted for suppression of ASE. The first portion of laser host material and the second portion of laser host material may be respectively doped at a different predetermined concentration of laser ions. A heat exchanger may be provided to dissipate heat from the first portion and the second portion.
Claims36
A laser system, comprising:
- a first portion of laser host material adapted for amplification of laser radiation;
- and
- a second portion of laser host material surrounding the first portion and adapted for suppression of ASE, wherein the first portion of laser host material and the second portion of laser host material are respectively doped at a different predetermined concentration of laser ions;
- and
- a heat exchanger to dissipate heat from the first portion and the second portion.
A thin disk laser, comprising:
- a central portion of laser host material doped with laser ions at a first predetermined concentration for amplification of laser radiation;
- and
- an edge portion of laser host material surrounding the central portion and doped with laser ions at a second predetermined concentration for suppression of ASE, wherein the second predetermined concentration is substantially higher than the first predetermined concentration.
A method for making a laser system, comprising:
- forming a first plate of laser host material adapted for absorption of ASE;
- forming a second plate of laser host material adapted for amplification of laser radiation;
- and
- forming an opening in the first plate to receive the second plate within the first plate to form a disk laser assembly.
A method for suppressing ASE in a laser system, comprising disposing a central portion of laser host material within a substantially annular edge portion of laser host material, wherein the central portion of laser host material includes laser ion doping at a first predetermined concentration for amplification of laser radiation, and wherein the substantially annular edge portion of laser host material includes laser ion doping at a second predetermined concentration for absorption of ASE.
Dependencies are inferred from the claim text.