Semiconductor memory device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMitsuaki HAYASHI, Wataru Abe, Shuji Nakaya, Masakazu Kurata
Life of this patent
Estimating the term…
Loading patent…
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMitsuaki HAYASHI, Wataru Abe, Shuji Nakaya, Masakazu Kurata
Estimating the term…
A semiconductor memory device includes a memory cell array, a charge circuit which compensates for OFF leakage current developed at selected bit lines, a reset circuit having a ground potential corresponding to a potential at non-selected bit lines, a read circuit constituted by a plurality of transistors whose gates are connected to the bit lines, and a bit line precharge circuit which charges the selected bit lines for a fixed time period. As a result of adopting such a configuration, there is no need to provide a transmission gate, such as a column decoder, to a charging path between the read circuit and the bit lines, so that a low-power supply voltage operation can be effected without the influence of a substrate bias effect.
A semiconductor memory device comprising:
A semiconductor storage system comprising:
Dependencies are inferred from the claim text.