Sense amplifier for non-volatile memories
AssigneeSTMicroelectronics S.r.l.
InventorFrancesco La Rosa
Life of this patent
Estimating the term…
Abstract
A sense amplifier for reading a memory cell, comprising: a read node linked to the memory cell, an active stage connected to the read node and comprising means for supplying a read current on the read node, and a data output linked to a node of the active stage where an electrical voltage representative of the state of conductivity of the memory cell appears. The sense amplifier comprises means for adjusting a voltage appearing on the read node at a value inferior to a value of threshold voltage linked to the manufacturing technique of the sense amplifier. Application in particular to the reading of non-volatile memories of the type EEPROM, FLASH and PCM.
Claims28
A sense amplifier for reading a memory cell, the sense amplifier comprising:
- a read node linked to the memory cell;
- an active stage connected to the read node and comprising means for supplying a read current on the read node using a MOS transistor having a threshold voltage;
- a data output linked to a node of the active stage where a voltage appears which is representative of a state of conductivity of the memory cell;
- and
- means for maintaining a voltage (Vs) on the read node at a lower value than the threshold voltage.
A non-volatile memory, comprising:
- a memory cell;
- and
- a sense amplifier for reading the memory cell, wherein the sense amplifier comprises:
- a read node linked to the memory cell;
- an active stage connected to the read node and comprising means for supplying a read current on the read node using a MOS transistor having a threshold voltage;
- a data output linked to a node of the active stage where a voltage appears which is representative of a state of conductivity of the memory cell;
- and
- means for maintaining a voltage (Vs) on the read node at a lower value than the threshold voltage.
A sense amplifier comprising:
- a read node able to be coupled to a memory cell;
- an active stage coupled to said read node;
- a MOS selection transistor coupled to said read node and having a threshold voltage;
- and
- an active circuit structured to maintain a voltage on the read node lower than said threshold voltage.
A method of reading a memory comprising:
- selecting the memory cell;
- connecting the memory cell to a read nod of a sense amplifier;
- supplying a read current on the read node using a MOS transistor of the sense amplifier, the MOS transistor having a threshold voltage;
- and
- maintaining a read voltage on the read node at a value lower than the threshold voltage.
Dependencies are inferred from the claim text.