Method of programming data in a flash memory device
AssigneeHynix Semiconductor Inc.
InventorJong Hyun WANG
Life of this patent
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Abstract
A method of programming a most significant bit (MSB) data to a multi-level cell in a flash memory device including first and second cells includes performing a first program operation on the first cell using a first program voltage, the first cell being in a first state when the first program operation is performed on the first cell; if the first cell is determined to be in a second state after the first program operation, defining a second program voltage based on a result of comparing the first program voltage with a start voltage predefined for a second program operation; and performing the second program operation on the second cell using the second program voltage that has been defined according to a result of the comparison between the first program voltage and the start voltage.
Claims16
A method of programming data in a flash memory device including a plurality of multi-level cells including a first cell and a second cell, the method comprising:performing a first program operation on the first cell and the second cell using a first program voltage, the first cell being in a first state when the first program operation is performed on the first cell;
- determining whether or not the first cell is programmed to a second state after the first program operation has been performed;
- if the first cell is determined to be in the second state, comparing the present program voltage and a start voltage for a second program operation;
- defining a second program voltage for the second program operation based on a result of the comparison;
- and
- performing the second program operation on the second cell using the second program voltage that has been defined according to the result of the comparison.
A method of programming data in a flash memory device including multi level cells having certain levels comprising:
- performing a program operation about cells having first level from a preset first start voltage;
- discriminating using a first verifying voltage whether or not a program verification about the cells having the first level is passed, increasing a program voltage in steps by a given voltage in case that the program verification is not passed, and then performing again the program operation;
- comparing a present program voltage with a second start voltage set about cells having a second level in case that the program verification is passed, and performing the program operation from the present program voltage or the second start voltage in accordance with the comparison result;
- and
- discriminating using a second verifying voltage whether or not a program verification about the cells having the second level is passed, increasing in steps the program voltage by a given voltage in case that the program verification about the cells having the second level is not passed, and then performing again the program operation.
Dependencies are inferred from the claim text.