Nonvolatile semiconductor memory device and programming method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorJae-Woo Im
Life of this patent
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Abstract
A nonvolatile semiconductor memory device and a programming method thereof are provided. The programming method includes first programming a cell among a plurality of adjacent memory cells to the highest threshold voltage distribution corresponding to a data state, and subsequently programming the other adjacent cells to the lower threshold voltage distributions corresponding to second and third data states. The second data state and the third data state may have the second highest threshold voltage distribution and the third highest threshold voltage distribution, respectively, or the third highest threshold voltage distribution and the second highest threshold voltage distribution, respectively.
Claims19
A programming method of a nonvolatile semiconductor memory device which includes a plurality of adjacent memory cells each cell having threshold voltage distributions corresponding respectively to first second, third and fourth data states, the programming method comprising:
- programming a cell to be programmed to the first data state among the plurality of adjacent memory cells to a threshold voltage distribution corresponding to the first data state;
- and
- programming a cell to be programmed to the second data state and a cell to be programmed to the third data state among the plurality of adjacent memory cells,
- wherein the first data state has the highest threshold voltage distribution among multiple data states.
A nonvolatile semiconductor memory device comprising:
- a memory cell array comprising a plurality of adjacent memory cells, each cell having threshold voltage distributions respectively corresponding to firsts second, third, and fourth data states;
- a write driver configured to program data stored in a input/output buffer into each of the memory cells in the memory cell array;
- and
- a controller configured to control the write driver to program a cell to be programmed to the first data state to the threshold voltage distribution corresponding to the first data state based on the data stored in the input/output buffer before controlling the write driver to program any cells to be programmed to the second, third or fourth data states based on the data stored in the input/output buffer.
A nonvolatile semiconductor memory device comprising:
- a memory cell array comprising a plurality of adjacent memory cells, each cell having threshold voltage distributions respectively corresponding to firsts second, third, and fourth data states, wherein the highest threshold voltage distribution corresponds to the first data state;
- a write driver configured to program data into each of the memory cells in the memory cell array;
- and
- a controller configured to control the write driver to first program any cells to be programmed to the first data state, based on the data, to the threshold voltage distribution corresponding to the first data state prior to controlling the write driver to program any cells to be programmed to the second, third or fourth data states.
Dependencies are inferred from the claim text.