Magnetic memory cell and magnetic memory device

A magnetic memory device comprising:

• a plurality of magnetic memory cells;
• a selection means for selecting one of the plurality of magnetic memory cells;
• a write means for performing writing by reversing magnetization of the selected magnetic memory cell;
• and
• a read means for reading the magnetization of the selected magnetic memory cell, wherein
• each of the magnetic memory cells includes:
• a non-magnetic region;
• first and second magnetization pinned terminals connected, with a space therebetween, to one surface of the non-magnetic region;
• a magnetization free terminal connected to a different surface of the non-magnetic region from the surface to which the first and second magnetization pinned terminals are connected, and magnetization directions of the first and second magnetization pinned terminals are non-parallel to each other,
• the write means performs writing by applying a current between the first and second magnetization pinned terminals through the non-magnetic region in the selected magnetic memory cell, and thus reversing magnetization of the magnetization free terminal with a polarity of the current, and
• the read means reads the magnetization of the selected magnetic memory cell by applying a sense current between the first magnetization pinned terminal and the magnetization free terminal in the magnetic memory cell, and thus detecting a magnetic resistance attributable to the magnetization direction of the magnetization free terminal relative to the magnetization direction of the first magnetization pinned terminal.