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US 2008/0175035 A1Published application
Non-volatile resistance changing for advanced memory applications
AssigneeSpansion LLC
InventorMasao Taguchi
Life of this patent
Estimating the term…
Abstract
A resistance changing memory unit cell includes a resistance changing memory element coupled to a sense bit line and a diode coupled to the resistance changing memory element.
Claims19
A resistance changing memory unit cell, comprising:
- a resistance changing memory element coupled to a sense bit line;
- and
- a diode coupled to the resistance changing memory element.
A resistance changing memory architecture, comprising:
- a plurality of resistance changing memory unit cells coupled between a sense bit line and a local current bus, wherein each unit cell comprises:
- a resistance changing memory element coupled to the sense bit line;
- and
- a diode coupled to between the resistance changing memory element and local current bus;
- a current control component coupled between the local current bus and a word line.
2 more elements
A resistance changing memory array architecture, comprising:
- an array of resistance changing memory unit cells, wherein the unit cells are organized in unit cell groups, and wherein each unit cell in a respective group is coupled between a respective sense bit line and a shared local current bus;
- and
- a current control component coupled between the shared local current bus of a unit cell group and a word line, and configured to selectively limit a current conducting therethrough from one or more of the unit cells in the unit cell group.
Dependencies are inferred from the claim text.