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US 2008/0175032 A1Published application
Semiconductor memory and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsHiroyasu TANAKA, Ryota Katsumata, Hideaki Aochi, Masaru Kidoh, Masaru Kito, Mitsuru Sato
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Abstract
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a plurality of memory devices each having: a resistance change element, and a diode connected serially to the resistance change element; and a source conductive layer spreading two-dimensionally to be connected to one ends of the plurality of memory devices.
Claims19
A nonvolatile semiconductor memory comprising:
- a plurality of memory devices each having:
- a resistance change element, and
- a diode connected serially to the resistance change element;
- and
- a source conductive layer spreading two-dimensionally to be connected to one ends of the plurality of memory devices.
2 more elements
A nonvolatile semiconductor memory comprising:
- a semiconductor substrate;
- an insulating layer formed on the semiconductor substrate;
- a first conductive layer formed on the insulating layer;
- a first interlayer insulating layer formed on the first conductive layer;
- a second conductive layer formed on the first interlayer insulating layer;
- a first memory device having:
- a first n-type semiconductor formed in the first conductive layer,
- a first p-type semiconductor formed in the first n-type semiconductor,
- a first metal silicide formed in the first p-type semiconductor, and
- a first metal oxide formed in the first metal silicide;
- a second memory device having:
- a second n-type semiconductor formed in the second conductive layer,
- a second p-type semiconductor formed in the second n-type semiconductor,
- a second metal silicide formed in the second p-type semiconductor, and
- a second metal oxide formed in the second metal silicide;
- and
- a columnar conductor penetrating through the first conductive layer, the first interlayer insulating layer and the second conductive layer in the first metal oxide and the second metal oxide.
14 more elements
Dependencies are inferred from the claim text.