Capacitor, semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a first substrate;
• a thin film transistor over the first substrate, comprising an active layer;
• an interlayer insulating film over the thin film transistor, having a contact hole;
• a pixel electrode over the interlayer insulating film, electrically connected to the active layer via the contact hole;
• a conductive layer adjacent to the pixel electrode with an insulating layer therebetween;
• a spacer over the interlayer insulating film, comprising a resin material;
• and
• a second substrate over the spacer,
• wherein the spacer at least partly overlaps the conductive layer with the insulating layer therebetween.

A semiconductor device comprising:

• a first substrate;
• a thin film transistor over the first substrate, comprising an active layer comprising a channel forming region;
• an interlayer insulating film over the thin film transistor, having a contact hole;
• a pixel electrode over the interlayer insulating film, electrically connected to the active layer via the contact hole;
• a conductive layer adjacent to the pixel electrode with an insulating layer therebetween;
• a spacer over the interlayer insulating film, comprising a resin material;
• and
• a second substrate over the spacer,
• wherein the spacer at least partly overlaps the conductive layer with the insulating layer therebetween, and
• wherein the conductive layer at least partly overlaps the channel forming region.

A semiconductor device comprising:

• a first substrate;
• a thin film transistor over the first substrate, comprising an active layer comprising a channel forming region;
• a first interlayer insulating film over the thin film transistor, having a first contact hole;
• a second interlayer insulating film over the first interlayer insulating film, having a second contact hole;
• a pixel electrode over the second interlayer insulating film, electrically connected to the active layer via the first contact hole and the second contact hole;
• a conductive layer adjacent to the pixel electrode with an insulating layer therebetween;
• a spacer over the interlayer insulating film, comprising a resin material;
• and
• a second substrate over the spacer,
• wherein the spacer at least partly overlaps the conductive layer with the insulating layer therebetween, and
• wherein the conductive layer at least partly overlaps the channel forming region.

A semiconductor device comprising:

• a first substrate;
• a thin film transistor over the first substrate, comprising an active layer comprising a channel forming region;
• a first interlayer insulating film over the thin film transistor, having a first contact hole;
• a wiring over the first interlayer insulating film, electrically connected to the active layer via the first contact hole;
• a second interlayer insulating film over the first interlayer insulating film, having a second contact hole;
• a pixel electrode over the second interlayer insulating film, electrically connected to the wiring via the second contact hole;
• a conductive layer adjacent to the pixel electrode with an insulating layer therebetween;
• a spacer over the interlayer insulating film, comprising a resin material;
• and
• a second substrate over the spacer,
• wherein the spacer at least partly overlaps the conductive layer with the insulating layer therebetween, and
• wherein the conductive layer at least partly overlaps the channel forming region.

A semiconductor device comprising:

• a first substrate;
• a thin film transistor over the first substrate, comprising an active layer comprising a channel forming region;
• an interlayer insulating film over the thin film transistor, having a contact hole;
• a pixel electrode over the interlayer insulating film, electrically connected to the active layer via the contact hole;
• a conductive layer adjacent to the pixel electrode with an insulating layer therebetween;
• a first spacer over the interlayer insulating film, comprising a resin material;
• a sealing member over the interlayer insulating film, surrounding the pixel electrode;
• a second spacer in the sealing member;
• and
• a second substrate over the first spacer and the second spacer,
• wherein the first spacer at least partly overlaps the conductive layer with the insulating layer therebetween, and
• wherein the conductive layer at least partly overlaps the channel forming region.