Planar spiral inductor structure having enhanced Q value
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHeng-Ming Hsu, Yen-Shih Ho
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Abstract
Within a method for fabricating an inductor structure there is first provided a substrate. There is then formed over the substrate a planar spiral conductor layer to form a planar spiral inductor, wherein a successive series of spirals within the planar spiral conductor layer is formed with a variation in at least one of: (1) a series of linewidths of the successive series of spirals; and (2) a series of spacings of the successive series of spirals. The method contemplates a planar spiral inductor structure fabricated in accord with the method. A planar spiral inductor structure fabricated in accord with the method is characterized by an enhanced Q value of the planar spiral inductor structure.
Claims8
1-8. (canceled)
An inductor structure comprising:
- a substrate;
- a planar spiral conductor layer formed over the substrate to form a planar spiral inductor formed over the substrate, wherein a successive series of spirals within the planar spiral conductor layer is formed with a variation in at least one of:
- a series of linewidths within the successive series of spirals;
- and
- a series of spacings separating the successive series of spirals.
Dependencies are inferred from the claim text.