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US 2008/0174357 A1Published application
Semiconductor device
AssigneeEudyna Devices Inc.
InventorHajime MATSUDA
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a switch includes a first FET connected to a terminal and a second FET of a stage following that of the first FET. The gate width of the first FET is greater than that of the second FET. A sum of lengths of a source electrode and a drain electrode of the first FET in a direction perpendicular to the gate width of the first FET is smaller than a sum of lengths of a source electrode and a drain electrode of the second FET in a direction perpendicular to the gate width of the second FET.
Claims5
A semiconductor device having a switch comprising:
- a terminal;
- another terminal;
- a first FET connected to the terminal;
- and
- a second FET of a stage following that of the first FET,
- a gate width of the first FET being greater than that of the second FET,
- a sum of lengths of a source electrode and a drain electrode of the first FET in a direction perpendicular to the gate width of the first FET being smaller than a sum of lengths of a source electrode and a drain electrode of the second FET in a direction perpendicular to the gate width of the second FET.
4 more elements
A semiconductor device comprising:
- switches connected to a common terminal,
- east one of the switches including;
- a first FET connected to a terminal;
- and
- a second FET of a stage following that of the first FET,
- gate width of the first FET being greater than that of the second FET,
- a sum of lengths of a source electrode and a drain electrode of the first FET in a direction perpendicular to the gate width of the first FET being smaller than a sum of lengths of a source electrode and a drain electrode of the second FET in a direction perpendicular to the gate width of the second FET.
4 more elements
Dependencies are inferred from the claim text.