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AssigneeFujitsu Limited
InventorKenichi Kawai
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A method of measuring resistance of a tunnel magnetoresistive element having a first conductive layer, a resistive layer and a second conductive layer stacked on a substrate in this order. This magnetoresistive element has a pinned layer on one of the first and second low resistance layers, and a free layer on the other, and a barrier layer sandwiched between the pinned and free layers serving as the resistive layer. The method includes preparing a sample including in the following stacking order on the substrate a first low resistance layer having a low resistance, a thin film constituting the tunnel magnetoresistive element and having a constitution identical to the thin films formed of the first conductive, resistive, and second conductive layers and a second low resistance layer having a low resistance, and applying a resistance measurement probe to a surface of the sample to measure resistance of the thin film.
A thin film resistance measurement method that measures resistance of a thin film comprising a first conductive layer, a resistive layer and a second conductive layer stacked on a substrate in this order, the method comprising:
A method of fabricating a tunnel magnetoresistive element comprising a first conductive layer, a resistive layer and a second conductive layer stacked in a substrate in this order, wherein there is a pinned layer on one of the first conductive layer and the second conductive layer, and a free layer in the other of the first conductive layer and the second conductive layer, and a barrier layer sandwiched between the pinned layer and the free layer serves as the resistive layer, the method comprising:
Dependencies are inferred from the claim text.