Semiconductor interconnect structure with rounded edges and method for forming the same

A method for forming an interconnect structure within a semiconductor device comprising:

• providing a semiconductor structure including conductive structures filling openings formed in a dielectric layer and having a planar upper surface including an upper planar dielectric surface and top planar conductive surfaces, each conductive structure having opposed upper edges formed of an intersection of said planar conductive surface and said generally straight sidewalls;
• and
• performing a processing operation that both downwardly recedes said upper planar dielectric surface and inwardly recedes and rounds said upper edges.

A method for increasing minimum spacing between adjacent formed interconnect structures, said method comprising:

• forming interconnect structures in adjacent openings formed in a dielectric layer. each of said interconnect structures having a top surface coplanar with a planar upper surface of said dielectric layer, said adjacent interconnect structures having a first minimum spacing therebetween;
• performing an operation that both etches a depth of said dielectric layer and laterally recedes each of opposed upper edges of said interconnect structures to provide a second minimum spacing between said interconnect structures, said second minimum spacing being greater than said first minimum spacing;
• said interconnect structures formed of conductive materials.