Semiconductor device
AssigneeSeiko Epson Corporation
InventorTerunao HANAOKA
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Abstract
A semiconductor device includes a semiconductor substrate provided with an integrated circuit and an electrode electrically coupled to the integrated circuit, a first resin layer formed on a surface of the semiconductor substrate, the surface provided with the electrode, a wiring electrically coupled to the electrode and formed on the first resin layer, a metallic layer formed on the first resin layer, a second resin layer provided with a first through hole overlapped with the wiring and a second through hole for exposing a part of the metallic layer, and an external terminal formed inside the first through hole on the wiring.
Claims7
A semiconductor device comprising:
- a semiconductor substrate that is provided with an integrated circuit and an electrode electrically coupled to the integrated circuit;
- a first resin layer that is formed on a surface of the semiconductor substrate, the surface of the semiconductor substrate being provided with the electrode;
- a wiring that is electrically coupled to the electrode and formed on the first resin layer;
- a metallic layer that is formed on the first resin layer;
- a second resin layer that is provided with a first through hole overlapped with the wiring and a second through hole for exposing a part of the metallic layer;
- and
- an external terminal that is formed inside the first through hole on the wiring.
Dependencies are inferred from the claim text.