Method for realizing an electric linkage in a semiconductor electronic device between a nanometric circuit architecture and standard electronic components

A method, comprising:

• providing first and second conductive nanowires substantially parallel to each other and extended along a direction x;
• forming an insulating layer above the nanowires;
• exposing a first exposed portion of the first nanowire and a second exposed portion of the second nanowire, by opening, in the insulating layer, a window of nanometric width b extended along a direction inclined by an angle α with respect to the direction x of the nanowires so as to cross the first and second conductive nanowires;
• realizing, above said insulating layer, first and second conductive dies, the first conductive die overlapping said first exposed portion and the second conductive die overlapping said second exposed portion;
• and
• forming a first contact connecting the first exposed portion to the first conductive die and a second contact connecting the second exposed portion to the second conductive die.

A device, comprising:

• a nanometric circuit architecture that includes a succession of conductive nanowires substantially parallel to each other and extended along a direction x;
• an insulating layer above said succession of nanowires, the insulating layer including a window of nanometric width b extended along a direction inclined by an angle α with respect to the extension direction x of the nanowires so as to substantially cross the whole succession of nanowires, the window exposing a succession of exposed portions of said nanowires, one for each nanowire;
• a plurality of conductive dies above said insulating layer, the conductive dies extending along a direction y substantially orthogonal to said direction x, each of said dies overlapping in correspondence with said window onto a respective one of said exposed portions of said nanowires;
• and
• a plurality of contacts respectively connecting said exposed portions of said nanowires with said conductive dies.