Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device and a method for manufacturing the semiconductor device are provided. The method includes: forming a base interlayer dielectric layer having a first metal wiring on a semiconductor substrate, and a diffusion stop layer on the base interlayer dielectric layer to expose the first metal wiring; forming a first interlayer dielectric layer pattern having a trench and a via hole penetrating through the first interlayer dielectric pattern; forming a second metal wiring in the trench and the via hole and contacting the first metal wiring; exposing an upper portion of the second metal wiring by etching the first interlayer dielectric layer pattern; depositing a silicon nitride film over the first interlayer dielectric layer pattern; and forming a spacer on side walls of the exposed upper portion of the second metal wiring.

Dependencies are inferred from the claim text.