Semiconductor device
AssigneeSeiko Epson Corporation
InventorTerunao Hanaoka
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor substrate having an integrated circuit formed thereon and an electrode electrically coupled to the integrated circuit; a passivation film formed on a surface of the semiconductor substrate, the surface having the electrode formed thereon; a first metal layer formed so as to come into contact with the passivation film; a resin layer formed on the first metal layer; a wiring formed so as to be electrically coupled to the electrode and reach an upper surface of the resin layer; and a second metal layer formed so as to be in contact with the first metal layer and reach the upper surface of the resin layer.
Claims6
A semiconductor device, comprising:
- a semiconductor substrate that has an integrated circuit and an electrode electrically coupled to the integrated circuit;
- a passivation film that is formed on a surface of the semiconductor substrate, the electrode being formed on the surface of the semiconductor substrate;
- a first metal layer that is formed so as to come into contact with the passivation film;
- a resin layer that is formed on the first metal layer;
- a wiring that is formed so as to be electrically coupled to the electrode and reach an upper surface of the resin layer;
- and
- a second metal layer that is formed so as to be in contact with the first metal layer and reach the upper surface of the resin layer.
Dependencies are inferred from the claim text.