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US 2008/0174011 A1Published application
Semiconductor structure and method for forming the same
AssigneeChipMOS Technologies Inc.
InventorWen-Yung Fu
Life of this patent
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Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate and an integrated circuit laid on the substrate. A barrier layer is formed to provide a flattened surface, so that the under bump metal can be formed thereon. In this way, discontinuities, which would otherwise affect the impedance distribution, are avoided in the conductive layer, and thus, provide a stable conduction.
Claims7
A semiconductor structure comprising:
- a substrate;
- an integrated circuit being laid on the substrate;
- a passivation layer being formed on the substrate provided with the integrated circuit to form a substantially non-flattened first upper surface;
- a barrier layer being formed on the passivation layer to form a substantially flattened second surface;
- and
- an under bump metal being formed on the second surface of the barrier layer.
3 more elements
A method for forming a semiconductor structure, comprising the steps of:
- forming a passivation layer having a substantially non-flattened first surface on a substrate where an integrated circuit is laid;
- planarizing the passivation layer by forming a barrier layer having a substantially flattened second surface;
- and
- construing a conductive interface for an electroplating process by forming an under bump metal on the second surface of the barrier layer.
1 more element
Dependencies are inferred from the claim text.