Structure of Memory Card and the Method of the Same

A method for forming semiconductor device package comprising:

• providing a substrate with a die receiving cavity formed within an upper surface of said substrate and a through hole structure formed there through, wherein a conductive trace formed on or within said substrate;
• providing a first die disposed within said die receiving cavity;
• forming a first dielectric layer over said first die and said substrate;
• forming a first re-distribution layer (RDL) on said first dielectric layer, wherein said first RDL is coupled to said first die and said traces;
• forming a second dielectric layer over said first RDL;
• forming a second die disposed on said second dielectric layer;
• forming a third dielectric layer over said second dielectric layer and said second die;
• forming a second RDL formed on said third dielectric layer, wherein said second RDL is coupled to said second die and said first RDL;
• forming a forth dielectric layer formed over said second RDL;
• providing a third die over said forth dielectric layer and coupled to said second RDL;
• forming a fifth dielectric layer formed around said third die;
• and providing a plastic cover enclosed said first, second and third dice.