Dielectric cap having material with optical band gap to substantially block uv radiation during curing treatment, and related methods

A method of forming a dielectric cap, the method comprising:

• providing an inter-level dielectric (ILD);
• forming a dielectric material layer over the ILD the dielectric material having an optical band gap that substantially blocks ultraviolet radiation and includes nitrogen with electron donor, double bond electrons;
• and
• curing the dielectric material layer using the ultraviolet radiation.

A dielectric cap comprising:

• silicon nitrogen based dielectric material having:
• a) an optical band gap greater than about 3.0 electron-Volts (eV) to substantially block ultraviolet radiation during a curing treatment;
• b) nitrogen with electron donor, double bond electrons;
• and c) a carbon constituent.