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US 2008/0173979 A1Published application
Semiconductor device with leaning storage node contact and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorBuem-Suck Kim
Life of this patent
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Abstract
A method for fabricating a semiconductor device including preparing a substrate provided with a first storage node contact, forming a second storage node contact over the first storage node contact, the second storage node contact leaning to one side, and forming a storage node of a capacitor over the second storage node contact.
Claims11
A method for fabricating a semiconductor device, the method comprising:
- preparing a substrate provided with a first storage node contact;
- forming a second storage node contact over the first storage node contact, the second storage node contact leaning to one side;
- and
- forming a storage node of a capacitor over the second storage node contact.
1 more element
A semiconductor device, the device comprising:
- a substrate provided with a first storage node contact;
- a second storage node contact disposed over the first storage node contact, and leaning to one side;
- and
- a storage node of a capacitor over the second storage node contact.
1 more element
Dependencies are inferred from the claim text.