MIM capacitor and metal gate transistor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKuo-Chi Tu
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Abstract
An embedded MIM capacitor in a logic circuit and method for forming the same are disclosed. The device includes a substrate, a bottom electrode, a dielectric film, and a top electrode. The substrate comprises an insulator region. The bottom electrode comprises a first conductor and overlies the insulator region. The dielectric film overlies the bottom electrode, remaining parts of the bottom plate exposed. The top electrode comprises a second conductor and overlies the dielectric film. The dielectric film lines sidewalls and bottom of the top electrode.
Claims20
A device comprising:
- a substrate comprising an insulator region;
- a bottom electrode, comprising a first conductor, overlying the insulator region;
- a dielectric film overlying the bottom electrode, remaining parts of the bottom plate exposed;
- and
- a top electrode, comprising a second conductor, overlying the dielectric film, wherein the dielectric film lines sidewalls and bottom of the top electrode.
A device comprising a capacitor and a transistor, comprising:
- a substrate comprising a mixed mode region adjacent to a logic circuit region;
- a bottom electrode, comprising a first metal, overlying an insulator region in the mixed mode region;
- a dielectric film overlying the bottom electrode and a semiconductor region in the logic circuit region, respectively acting as a capacitor dielectric film and a gate dielectric;
- a second metal overlying the dielectric film, respectively acting as a top electrode of a capacitor structure in the mixed mode region and a real gate electrode of a transistor structure in the logic circuit region, wherein the dielectric film lines sidewalls of the top electrode and the real gate electrode;
- and
- an insulator layer overlying the capacitor structure and the transistor structure.
A device comprising a capacitor and a transistor comprising:
- a substrate comprising an insulator region adjacent to a semiconductor region;
- a bottom electrode, comprising a first conductor, disposed on the insulator region;
- a dielectric film disposed on the bottom electrode and the semiconductor region, respectively acting as a capacitor dielectric film and a gate dielectric;
- and
- a second conductor disposed on the capacitor dielectric film and the gate dielectric, respectively acting as a top electrode of a capacitor structure and a real gate electrode of a transistor structure.
Dependencies are inferred from the claim text.