Electrode isolation method and nanowire-based device having isolated electrode pair

A method of integrating a nanowire between isolated electrodes of a nanowire-based device comprising:

• providing a substrate that comprises a semiconductor layer having a crystal orientation and an insulating film on a surface of the semiconductor layer, the insulating film having a window that exposes a portion of the semiconductor layer surface;
• selectively epitaxially growing a semiconductor feature from the semiconductor layer through the window, the semiconductor feature having a vertical stem and a ledge with the crystal orientation of the semiconductor layer, the vertical stem being in contact with the semiconductor layer through the window, the ledge being a lateral epitaxial overgrowth of the vertical stem on the insulating film;
• creating a pair of isolated electrodes from the semiconductor feature and the semiconductor layer;
• and
• growing a nanowire to self-assemble between horizontal surfaces of the isolated electrodes of the pair.

A nanowire-based device having isolated electrodes comprising:

• a substrate electrode having a crystal orientation;
• a ledge electrode that is an epitaxial semiconductor having the crystal orientation of the substrate electrode, the ledge electrode being electrically isolated from and cantilevered above the substrate electrode;
• and
• a nanowire bridging between respective surfaces of the substrate electrode and the ledge electrode.