Diode
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Franz-Josef Niedernostheide, Reiner Barthelmess
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Abstract
A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.
Claims22
A diode comprising:
- a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body, and which contains, successively in a vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone, the weakly p-doped zone having a thickness in the vertical direction which is at least 25% and at most 50% of the thickness of the semiconductor body in the vertical direction.
A method for fabricating a diode comprising:
- providing a semiconductor body, which has a weak n-type base doping;
- and
- fabricating the weakly p-doped zone by introducing aluminum into the semiconductor body from the front and subsequently diffusing the aluminum into the semiconductor body to a depth, measured from the front, which is between 25% and 50% of the total thickness of the semiconductor body.
A method for fabricating a diode comprising:
- providing a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body, the semiconductor body having a weak p-type base doping;
- and
- fabricating an n-doped field stop zone by diffusing sulfur and/or selenium into the semiconductor body from its back.
A semiconductor body comprising:
- a back;
- a heavily n-doped zone adjacent the back;
- a weakly n-doped zone adjacent the heavily n-doped zone;
- a weakly p-doped zone adjacent the weakly n-doped zone;
- a heavily p-doped zone adjacent the weakly p-doped zone;
- and
- a front adjacent the heavily p-doped zone;
- wherein the weakly p-doped zone has a thickness in a vertical direction that is at least 25% and at most 50% of the distance between the front and back of the semiconductor body in the vertical direction.
Dependencies are inferred from the claim text.