Guard ring structure for improving crosstalk of backside illuminated image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Hsuan Hsu, Shou-Gwo Wuu, Dun-Nian Yaung
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Abstract
The present disclosure provides a backside illuminated semiconductor device. The device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed in the substrate, each of the plurality of sensor elements is designed and configured to receive light directed towards the back surface; and a sensor isolation feature formed in the substrate, and disposed horizontally between two adjacent elements of the plurality of sensor elements, and vertically between the back surface and the front surface.
Claims22
A backside illuminated semiconductor device, comprising:
- a substrate having a front surface and a back surface;
- a plurality of sensor elements formed in the substrate, each of the plurality of sensor elements designed and configured to receive light directed towards the back surface;
- and
- a sensor isolation feature formed in the substrate, and disposed horizontally between two adjacent sensor elements of the plurality of sensor elements, and vertically between the back surface and the front surface.
A semiconductor device, comprising:
- a semiconductor substrate having a front surface and a back surface;
- a sensor element disposed in the front surface;
- a conductive interconnect feature disposed on the front surface, overlying the sensor element;
- and
- a sensor isolation feature formed in the semiconductor substrate, disposed horizontally around the sensor element and vertically between the back surface and the conductive interconnect feature.
A method to fabricate a semiconductor device, comprising:
- providing a semiconductor substrate having a front surface and a back surface;
- forming a sensor element in the front surface;
- forming conductive interconnect on the front surface, overlying the sensor element;
- and
- forming a sensor isolation feature in the semiconductor substrate, disposed horizontally around
- the sensor element and vertically between the back surface and the conductive interconnect.
Dependencies are inferred from the claim text.