Back to results
US 2008/0173960 A1Published application
MicroElectroMechanical Systems Contact Stress Sensor
OwnerJack Kotovskyinventor
Life of this patent
Estimating the term…
Abstract
A microelectromechanical systems stress sensor comprising a microelectromechanical systems silicon body. A recess is formed in the silicon body. A silicon element extends into the recess. The silicon element has limited freedom of movement within the recess. An electrical circuit in the silicon element includes a piezoresistor material that allows for sensing changes in resistance that is proportional to bending of the silicon element.
Claims53
A microelectromechanical systems stress sensor, comprising:
- a microelectromechanical systems body,
- a recess in said body,
- a silicon element that extends into said recess, said silicon element having limited freedom of movement within said recess, and
- an electrical circuit in said silicon element, said electrical circuit including a piezoresistor material.
1 more element
A stress sensor, comprising:
- microelectromechanical systems body means for providing a base,
- recess means in said body means for forming an open area,
- silicon element means that extends into said recess means for limited movement, and
- electrical circuit means in said silicon element means for sensing movement of said silicon element means.
1 more element
A method of producing a stress sensor, comprising the steps of:
- microprocessing a silicon body to produce a recess in said silicon body,
- microprocessing said silicon body to produce a silicon element that extends into said recess and has a limited freedom of movement within said recess,
- providing an electrical circuit including a piezoresistor material operatively connected to said silicon element and
- providing a measuring unit for measuring changes in electrical properties of said electrical circuit.
1 more element
Dependencies are inferred from the claim text.