Method of forming a semiconductor device having a symmetric dielectric regions and structure thereof

A semiconductor device comprising:

• a semiconductor substrate;
• a gate electrode over the semiconductor substrate having a first side and a second side;
• and
• a gate dielectric under the gate electrode, wherein the gate dielectric has a first area under the gate electrode and adjacent the first side of the gate electrode;
• a
• second area under the gate electrode and adjacent the second side of the gate electrode;
• and a third area under the gate electrode that is between the first area and the second area;
• wherein the first area is thinner than the second area, and the third arearea is thinner than the first area and is thinner than the second area.

A semiconductor device compromising:

• a semiconductor substrate;
• a gate electrode over the semiconductor substrate having a first side and a second side;
• and
• a gate dielectric under the gate electrode, wherein the gate dielectric is thicker near the first side of the gate electrode than near the second side of the gate electrode.

A method of forming a semiconductor device, the method comprising:

• forming a gate electrode over a semiconductor substrate, wherein the gate electrode has a first side of a second side;
• implanting a species into the semiconductor substrate and only adjacent the first side;
• and
• oxidizing the semiconductor substrate after the implantings.