Semiconductor device and complementary metal-oxide-semiconductor transistor

A complementary metal-oxide-semiconductor (CMOS) transistor, comprising:

• a substrate of a first conductive type;
• a first epitaxial layer of the first conductive type, disposed on the substrate;
• a second epitaxial layer of a second conductive type, disposed on the first epitaxial layer;
• a first sinker of the first conductive type, disposed in the first epitaxial layer and the second epitaxial layer, wherein the first sinker extends from the substrate to an upper surface of the second epitaxial layer and defines a first area from the first epitaxial layer and the second epitaxial layer;
• a second sinker of the second conductive type, disposed in the second epitaxial layer, wherein the second sinker extends from the first epitaxial layer to the upper surface of the second epitaxial layer and defines a second area from the second epitaxial of the first area;
• a third sinker of the first conductive type, disposed in the first and second epitaxial layers, wherein the third sinker extends from the substrate to the upper surface of the second epitaxial layer and defines a third area from the first epitaxial layer and the second epitaxial layer;
• a fourth sinker of the second conductive type, disposed in the second epitaxial layer, wherein the fourth sinker extends from the first epitaxial layer to the upper surface of the second epitaxial layer and defines a fourth area from the second epitaxial layer of the third area;
• a well region of the first conductive type, disposed in the second area;
• a first transistor, disposed in the well region;
• a second transistor, disposed in the fourth area;
• a first buried layer of the first conductive type, disposed between the first area and the substrate, and connected to the first sinker;
• a second buried layer of the second conductive type, disposed between the second area and the first epitaxial layer, and connected to the second sinker;
• a third buried layer of the first conductive type, disposed between the third area and the substrate, and connected to the third sinker;
• and
• a fourth buried layer of the second conductive type, disposed between the fourth area and the first epitaxial layer, and connected to the fourth sinker.