Complementary metal-oxide-semiconductor field effect transistor

A complementary metal-oxide-semiconductor field effect transistor (CMOSFET), comprising:

• a substrate, having a first conductivity type;
• a first epitaxial layer, having the first conductivity type, and disposed on the substrate;
• a second epitaxial layer, having a second conductivity type, and disposed on the first epitaxial layer;
• a first sinker, having the second conductivity type, and disposed in the second epitaxial layer, wherein the first sinker extends from the first epitaxial layer to an upper surface of the second epitaxial layer, and the first sinker separates a first region from the second epitaxial layer;
• a second sinker, having the second conductivity type, and disposed in the second epitaxial layer, wherein the second sinker extends from the first epitaxial layer to the upper surface of the second epitaxial layer, and the second sinker separates a second region from the second epitaxial layer outside the first region;
• a well, having the first conductivity type, and disposed in the first region;
• a first transistor, disposed in the well;
• a second transistor, disposed in the second region;
• a first buried layer, having the second conductivity type, and disposed between the first region and the first epitaxial layer and connected to the first sinker;
• a second buried layer, having the second conductivity type, and disposed between the second region and the first epitaxial layer and connected to the second sinker;
• and
• a deep trench isolation, disposed between the first region and the second region, wherein the deep trench isolation extends from the substrate to the upper surface of the second epitaxial layer.