ESD protection scheme for semiconductor devices having dummy pads

A semiconductor device formed in a semiconductor substrate for protecting an integrated circuit from electrostatic discharge and/or accumulated charge, the device comprising:

• a semiconductor substrate;
• a plurality of layers of metal lines formed overlying the substrate;
• a plurality of via plugs through intermetal dielectric layers between the layers of metal lines and wherein the via plugs interconnect the metal lines;
• and
• a dummy pad formed over the plurality of layers of metal lines, the dummy pad having a gate-grounded NMOS (ggNMOS) connected thereto, the drain being connected to the dummy pad and the gate and source being connected to ground for providing a discharge path for the electrostatic discharge and/or accumulated charge.

A semiconductor device formed in a semiconductor substrate for protecting an integrated circuit from electrostatic discharge and/or accumulated charge, the device comprising:

• a semiconductor substrate;
• a plurality of layers of metal lines formed overlying the substrate;
• a plurality of via plugs through intermetal dielectric layers between the layers of metal lines and wherein the via plugs interconnect the metal lines;
• and
• a dummy pad formed over the plurality of layers of metal lines, the dummy pad comprising:
• a gate-grounded NMOS (ggNMOS), the drain being connected to the dummy pad and the gate and source being connected to ground;
• and
• a diode connected to the dummy pad and to ground for providing a discharge path for the electrostatic discharge and/or accumulated charge.

A method for forming a semiconductor device in a semiconductor substrate for protecting an integrated circuit from electrostatic discharge and/or accumulated charge, the method comprising:

• providing a semiconductor substrate;
• forming a plurality of layers of metal lines overlying the substrate;
• forming a plurality of via plugs through intermetal dielectric layers between the layers of metal lines and wherein the via plugs interconnect the metal lines;
• and
• providing a dummy pad over the plurality of layers of metal lines, the dummy pad having a diode connected thereto and to ground for providing a discharge path for the electrostatic discharge and/or accumulated charge.

A method for forming a semiconductor device in a semiconductor substrate for protecting an integrated circuit from electrostatic discharge and/or accumulated charge, the method comprising:

• providing a semiconductor substrate;
• forming a plurality of layers of metal lines overlying the substrate;
• forming a plurality of via plugs through intermetal dielectric layers between the layers of metal lines and wherein the via plugs interconnect the metal lines;
• and
• providing a dummy pad over the plurality of layers of metal lines, the dummy pad having a gate-grounded NMOS (ggNMOS) connected thereto, the drain being connected to the dummy pad and the gate and source being connected to ground for providing a discharge path for the electrostatic discharge and/or accumulated charge.

A method for forming a semiconductor device in a semiconductor substrate for protecting an integrated circuit from electrostatic discharge and/or accumulated charge, the method comprising:

• providing a semiconductor substrate;
• forming a plurality of layers of metal lines overlying the substrate;
• forming a plurality of via plugs through intermetal dielectric layers between the layers of metal lines and wherein the via plugs interconnect the metal lines;
• and
• providing a dummy pad over the plurality of layers of metal lines, the dummy pad comprising:
• a gate-grounded NMOS (ggNMOS), the drain being connected to the dummy pad and the gate and source being connected to ground;
• and
• a diode connected to the dummy pad and to ground for providing a discharge path for the electrostatic discharge and/or accumulated charge.