MOSFET on SOI device
AssigneesSTMicroelectronics (Crolles 2) SAS, Commissariat a l'Energie Atomique
InventorsPhilippe Coronel, Claire Fenouillet-Beranger
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Abstract
MOSFET on SOI device, comprising: an upper region comprising at least one first MOSFET type semi-conductor device formed on a first semi-conductor layer stacked on a first dielectric layer, a first metallic layer and a first portion of a second semi-conductor layer, a lower region comprising at least one second MOSFET type semi-conductor device formed on a second portion of the second semi-conductor layer, a gate of the second semi-conductor device being formed by at least one metallic portion, the second semi-conductor layer being arranged on a second dielectric layer stacked on a second metallic layer.
Claims22
MOSFET on SOI device, comprising:
- an upper region comprising at least one first MOSFET type semi-conductor device formed on a first semi-conductor layer stacked on a first dielectric layer, a first metallic layer and a first portion of a second semi-conductor layer,
- a lower region comprising at least one second MOSFET type semi-conductor device formed on a second portion of the second semi-conductor layer, a gate of the second semi-conductor device being formed by at least one metallic portion,
- the second semi-conductor layer being arranged on a second dielectric layer stacked on a second metallic layer.
Method of fabricating a MOSFET on SOI device, comprising at least the steps of:
- a) fabricating a structure formed of a first semi-conductor layer stacked on a first dielectric layer, a first metallic layer, a second semi-conductor layer, a second dielectric layer and a second metallic layer,
- b) etching of a part of at least the first semi-conductor layer and the first dielectric layer, laying bare a part of the first metallic layer and defining the upper and lower regions of the MOSFET on SOI device,
- c) depositing a dielectric layer and a gate material on a non etched part of the first semi-conductor layer at the level of the upper part of the MOSFET on SOI device,
- d) etching of the gate material, forming the gate of a first MOSFET type semi-conductor device at the level of the upper region,
- e) formation of first and second MOSFET type semi-conductor devices, respectively at the level of the upper and lower regions.
Dependencies are inferred from the claim text.