Back to results
US 2008/0173939 A1Published application
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorDong Hwa Shim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate having an active region defined by a device isolation structure. A recessed channel is formed on the semiconductor substrate under the active region. A recessed junction region is formed between the recessed channel and the device isolation structure adjacent to the recessed channel.
Claims11
A semiconductor device comprising:
- a semiconductor substrate including a device isolation structure to define an active region;
- a recessed channel formed on the semiconductor substrate in the active region;
- and
- a recessed junction region formed to electrically contact with the recessed channel.
1 more element
A method for fabricating a semiconductor device, the method comprising:
- forming a device isolation structure on a semiconductor substrate to define an active region;
- selectively etching the active region to form a first recess;
- selectively etching the active region to form a second recess;
- forming a lower gate conductive layer over the first recess, the second recess, the device isolation structure and the semiconductor substrate to fill the first and second recesses;
- shaping the lower gate conductive layer to be planar until the semiconductor substrate is exposed;
- forming an upper gate conductive layer and a gate hard mask layer over the lower gate conductive layer and the semiconductor substrate;
- and
- patterning the gate hard mask layer and the upper gate conductive layer using a gate mask to form a recess gate.
5 more elements
Dependencies are inferred from the claim text.