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US 2008/0173935 A1Published application
Semiconducotor device and method for manufacturing the same
AssigneeDenso Corporation
InventorTakeshi Miyajima
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate, a cell region, an outer peripheral region, a field plate, an outermost peripheral ring, outer peripheral region layer, an insulator film, and a Zener diode. The semiconductor substrate has a superjunction structure. The outer peripheral region is disposed at an outer periphery of the cell region. The Zener diode is disposed on the insulator film for electrically connecting the field plate with the outermost peripheral ring. The Zener diode has a first conductivity type region and a second conductivity type region that are alternately arranged in a direction from the cell region to the outer peripheral region.
Claims19
A semiconductor device comprising:
- a semiconductor substrate that includes:
- a first conductivity type layer;
- a plurality of first conductivity type column regions that is disposed on the first conductivity type layer for serving as a drift region;
- and
- a plurality of second conductivity type column regions that is disposed on the first conductivity type layer for serving as the drift region, the semiconductor substrate having a repetition structure, in which the plurality of first conductivity type column regions and the plurality of second conductivity type column regions are repeatedly arranged along a surface of the first conductivity type layer;
- a cell region that is disposed on the semiconductor substrate, the cell region having a semiconductor chip;
- an outer peripheral region that is disposed on the semiconductor substrate at an outer periphery of the cell region;
- a field plate that is disposed to the semiconductor substrate on a cell region side of the outer peripheral region;
- an outermost peripheral ring that is disposed at an outermost edge portion of the outer peripheral region, the outermost peripheral ring being electrically connected with the semiconductor substrate;
- an outer peripheral region layer that is disposed on the repetition structure;
- an insulator film that is disposed on the outer peripheral region layer;
- and
- a Zener diode that is disposed on the insulator film for electrically connecting the field plate with the outermost peripheral ring, the Zener diode having a first conductivity type region and a second conductivity type region that are alternately arranged in a direction from the cell region to the outer peripheral region.
10 more elements
A semiconductor device comprising:
- a semiconductor substrate that includes:
- a first conductivity type layer;
- a plurality of first conductivity type column regions that is disposed on the first conductivity type layer for serving as a drift region;
- and
- a plurality of second conductivity type column regions that is disposed on the first conductivity type layer for serving as the drift region, the semiconductor substrate having a repetition structure, in which the plurality of first conductivity type column regions and the plurality of second conductivity type column regions are repeatedly arranged along a surface of the first conductivity type layer;
- a cell region that is disposed on the semiconductor substrate, the cell region having a semiconductor chip;
- an outer peripheral region that is disposed on the semiconductor substrate at an outer periphery of the cell region;
- a field plate that is disposed to the semiconductor substrate on a cell region side of the outer peripheral region;
- an outermost peripheral ring that is disposed at an outermost edge portion of the outer peripheral region, the outermost peripheral ring being electrically connected with the semiconductor substrate;
- an outer peripheral region layer that is disposed on the repetition structure;
- an insulator film that is disposed on the outer peripheral region layer;
- and
- a Zener diode that is disposed on the insulator film for electrically connecting the field plate with the outermost peripheral ring, the Zener diode having a first conductivity type region and a second conductivity type region that are alternately arranged along the outer periphery of the cell region.
10 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a cell region that is disposed on the semiconductor substrate, the cell region having a semiconductor chip;
- an outer peripheral region that is disposed on the semiconductor substrate at an outer periphery of the cell region;
- a field plate that is disposed to the semiconductor substrate on a cell region side of the outer peripheral region;
- an outermost peripheral ring that is disposed at an outermost edge portion of the outer peripheral region, the outermost peripheral ring being electrically connected with the semiconductor substrate;
- an outer peripheral region layer that is disposed on a surface portion of the outer peripheral region;
- an insulator film that is disposed on the outer peripheral region layer;
- and
- a Zener diode that is disposed on the insulator film for electrically connecting the field plate with the outermost peripheral ring, the Zener diode having a first conductivity type region and a second conductivity type region that are alternately arranged in a direction from the cell region to the outer peripheral region.
6 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a cell region that is disposed on the semiconductor substrate, the cell region having a semiconductor chip;
- an outer peripheral region that is disposed on the semiconductor substrate at an outer periphery of the cell region;
- a field plate that is disposed to the semiconductor substrate on a cell region side of the outer peripheral region;
- an outermost peripheral ring that is disposed at an outermost edge portion of the outer peripheral region, the outermost peripheral ring being electrically connected with the semiconductor substrate;
- an outer peripheral region layer that is disposed on a surface portion of the outer peripheral region;
- an insulator film that is disposed on the outer peripheral region layer;
- and
- a Zener diode that is disposed on the insulator film for electrically connecting the field plate with the outermost peripheral ring, the Zener diode having a first conductivity type region and a second conductivity type region that are alternately arranged along the outer periphery of the cell region, the Zener diode being made of a wide band gap material.
6 more elements
A method for manufacturing a semiconductor device, the method comprising:
- forming an outer peripheral region on a semiconductor substrate of the semiconductor device at an outer periphery of a cell region;
- and
- forming a Zener diode to the outer peripheral region, wherein:
- the forming of the Zener diode includes forming the Zener diode using a wide band gap material at a temperature of equal to or lower than 700° C.
1 more element
Dependencies are inferred from the claim text.