Non-volatile two-transistor semiconductor memory cell and method for producing the same
AssigneeInfineon Technologies AG
InventorsFranz Schuler, Georg Tempel
Life of this patent
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Abstract
The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region (7), a drain region (8) and a channel region lying in between being formed in a substrate (1). In order to realize locally delimited memory locations (LB, RB), an electrically non-conductive charge storage layer (3) situated on a first insulation layer (2) is divided by an interruption (U), thereby preventing, in particular, a lateral charge transport between the memory locations (LB, RB) and significantly improving the charge retention properties.
Claims9
Nonvolatile semiconductor memory cell having a substrate (1), which has a source region (7), a drain region (8) and a channel region lying in between, a first insulation layer (2), an electrically non conductive charge storage layer (3), a second insulation layer (4) and an electrically conductive control layer (10) being formed essentially at the surface of the channel region, and
- the electrically non-conductive charge storage layer (3) having an interruption (U) in order to form a first and a second memory location (LB, RB),
- characterized in that
- the first and second memory locations (LB, RB) are locally delimited.
Dependencies are inferred from the claim text.