Semiconductor device and method for manufacturing semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsTomonori TABE, Satoru Shimada, Kazunori Fujita, Yoshikazu Yamaoka
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Abstract
A semiconductor device that reduces the interval between gate electrodes. The semiconductor device includes a semiconductor substrate, a plurality of gate electrodes buried in the semiconductor substrate, a plurality of first insulation layers arranged respectively on the plurality of gate electrodes, a conductive layer formed on the surface of the semiconductor substrate near the plurality of gate electrodes and the plurality of first insulation layers, and a conductor layer arranged on at least the conductive layer.
Claims12
A semiconductor device comprising:
- a semiconductor substrate having a surface;
- a plurality of gate electrodes buried in the semiconductor substrate;
- a plurality of first insulation layers respectively arranged on the plurality of gate electrodes;
- a conductive layer formed on the surface of the semiconductor substrate near the plurality of gate electrodes and the plurality of first insulation layers;
- and
- a conductor layer arranged on at least the conductive layer.
A method for manufacturing a semiconductor device, the method comprising:
- preparing a semiconductor substrate having a surface;
- burying a plurality of gate electrodes in the semiconductor substrate;
- arranging a plurality of first insulation layers respectively on the plurality of gate electrodes;
- forming a conductive layer on the surface of the semiconductor substrate near the plurality of gate electrodes and the plurality of first insulation layers;
- and
- arranging a conductor layer on at least the conductive layer.
Dependencies are inferred from the claim text.