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US 2008/0173910 A1Published application
Image sensor and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorWoo-Seok Hyun
Life of this patent
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Abstract
An image sensor that can include a photodiode formed on one side of a substrate to receive light and then generate signal charges based on the light; and a transistor converting the signal charges into predetermined voltage and transmitting the voltage to an output terminal, whereby the transistor directly contact and surrounds the photodiode.
Claims20
An apparatus comprising:
- a photodiode formed over a substrate to receive light and then generate signal charges based on the light;
- and
- a transistor converting the signal charges into predetermined voltage and transmitting the voltage to an output terminal, wherein the transistor includes a first transistor region surrounding the photodiode and directly contacting the photodiode.
An apparatus comprising:
- a photodiode formed over a substrate;
- and
- a transistor in connection with and directly contacting the photodiode.
A method comprising:
- forming a photodiode over a substrate;
- and then
- forming a transistor directly contacting the photodiode.
Dependencies are inferred from the claim text.