Field effect transistor having a crank-shaped multigate structure
AssigneeMitsubishi Electric Corporation
InventorTakahiro Nakamoto
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Abstract
A field effect transistor of the present invention includes a pair of ohmic electrodes 2 and an n-type GaAs layer 1 formed between the pair of ohmic electrodes 2 and having recesses. Crank-shaped gate fingers 4 and 5 are formed within the recesses of the n-type GaAs layer 1 between the pair of ohmic electrodes 2, and each crank-shaped gate finger includes perpendicularly extending portions and parallelly extending portions relative to the [0, 1, 1] crystal orientation of the n-type GaAs layer 1. The portion of the n-type GaAs layer 1 between the gate fingers 4 and 5 continuously extends from the input ends of the gate electrodes to the terminal ends thereof. A non-active region 8 is formed around each perpendicularly extending portion of the gate fingers 4 and 5.
Claims7
A field effect transistor having a crank-shaped multigate structure, comprising:
- a pair of ohmic electrodes;
- a semiconductor layer located between said pair of ohmic electrodes and having a recess that has a perpendicular-extending portion and a parallel-extending portion, relative to a crystal orientation of said semiconductor layer;
- and
- a plurality of crank-shaped gate electrodes located within said recess of said semiconductor layer, each gate electrode having a perpendicular-extending portion and a parallel-extending portions relative to the crystal orientation of said semiconductor layer, said perpendicular-extending portion being disposed within said perpendicular-extending portion of said recess, said parallel-extending portion being disposed within said parallel-extending portion of said recess, wherein
- said semiconductor layer includes a non-active region located around either said perpendicular-extending portion or said parallel-extending portion of said plurality of gate electrodes relative to the crystal orientation of said semiconductor layer, and
- said semiconductor layer further includes an active region in a principal surface of said semiconductor layer, located between said plurality of gate electrodes, said active region continuously extending from input ends of said plurality of gate electrodes to terminal ends of said plurality of gate electrodes, and including a potential clamp electrode located on a surface of said active region.
A field effect transistor having a crank-shaped multigate structure, comprising:
- a pair of ohmic electrodes;
- a semiconductor layer located between said pair of ohmic electrodes and including an active region and a non-active region;
- and
- a plurality of crank-shaped gate electrode located on said semiconductor layer and having a bent portion, wherein
- said active region of said semiconductor layer is disposed between said plurality of gate electrodes and continuously extends from input ends of said plurality of gate electrodes to terminal ends of said plurality of gate electrodes, and
- said non-active region of said semiconductor layer located around said bent portion of said plurality of gate electrodes.
A field effect transistor having a crank-shaped multigate structure, comprising:
- a pair of ohmic electrodes;
- a semiconductor layer located between said pair of ohmic electrodes and including an active region;
- and
- a plurality of crank-shaped gate electrodes formed on said semiconductor layer and having a bent portion, wherein
- said active region of said semiconductor layer is disposed between said plurality of gate electrodes and continuously extends from input ends of said plurality of gate electrodes to terminal ends of said plurality of gate electrodes, and
- said bent portion of said plurality of gate electrodes has an arc shape with a radius of curvature.
The field effect transistor as claimed in claim 7, wherein:
- said semiconductor layer has a recess;
- and
- said plurality of gate electrodes are located within said recess.
Dependencies are inferred from the claim text.