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US 2008/0173904 A1Published application
CMOS image sensors with a bonding pad and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Chyi Liu, Shih-Chi Fu, Yuan-Hung Liu, Wei-Chih Chen, Chi-Hsin Lo
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Abstract
A CMOS image sensor with a bonding pad comprises a semiconductor substrate having a pixel region and a circuit region; a passivation layer having an opening over the semiconductor substrate; and a bonding pad in circuit region, the bonding pad without extending to an upper surface of the passivation layer.
Claims28
A method of forming a CMOS image sensor with a bonding pad, comprising:
- providing a semiconductor substrate having a pixel region and a circuit region;
- forming a passivation layer having an opening overlying the semiconductor substrate;
- conformally forming a metal layer on the passivation layer so that the metal layer has a recess at the opening;
- and
- selectively removing the metal layer to form a bonding pad without extending to an upper surface of the passivation layer.
2 more elements
A CMOS image sensor with a bonding pad, comprising:
- a semiconductor substrate having a pixel region and a circuit region;
- a passivation layer having an opening over the semiconductor substrate;
- and
- a bonding pad in the circuit region, wherein a surface of the bonding pad is higher than a top surface of the passivation layer and the bonding pad does not cover the top surface of the passivation layer.
1 more element
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Dependencies are inferred from the claim text.