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US 2008/0173897 A1Published application
III nitride power device with reduced QGD
AssigneeInternational Rectifier Corporation
InventorsJianjun Cao, Sadiki Jordan
Life of this patent
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Abstract
A III-nitride power switch that includes a III-nitride heterojunction, field dielectric bodies disposed over the heterojunction, and either gate conductive bodies that do not overlap the top surface of the field dielectric bodies or power contacts that do not overlap field dielectric bodies or both.
Claims18
A III-nitride power semiconductor switch, comprising:
- a III-nitride heterojunction that include two III-nitride bodies having different band gaps from one another;
- spaced field dielectric bodies over said III-nitride heterojunction;
- and
- a conductive body disposed in the space between said field dielectric bodies, wherein said conductive body does not overlap a top surface of said field dielectric bodies.
1 more element
A III-nitride power semiconductor switch, comprising:
- a III-nitride heterojunction that include two III-nitride bodies having different band gaps from one another;
- field dielectric bodies over said III-nitride heterojunction, said dielectric bodies being spaced from one another by a first space and a second space;
- a first conductive body disposed in said first space;
- a second conductive body disposed in said second space, wherein said second conductive body does not overlap a top surface of said field dielectric bodies.
1 more element
A method for fabricating a III-nitride semiconductor switch, comprising:
- forming a III-nitride heterojunction;
- forming a field dielectric layer over said III-nitride heterojunction;
- opening a window inside said field dielectric layer;
- depositing a conductive body inside said window and over top surfaces of said field dielectric layer;
- and
- removing conductive body from atop said field dielectric layer including any portion of said conductive body that overlaps a top surface of said field dielectric layer.
3 more elements
Dependencies are inferred from the claim text.