US 2008/0173887 A1 · Self-luminous device

Abstract

A self-luminous device 1 is one embodiment which has an increased light extraction efficiency by optimizing the distribution of refractive index in semiconductor layers. The self-luminous device 1 includes a first layer (semiconductor layer 2), a light emitting layer 3 overlaying the first layer (semiconductor layer 2), and a second layer (semiconductor layer 4) overlaying the light emitting layer 3. The first layer (semiconductor layer 2) and the second layer (semiconductor layer 4) have different refractive indices so that the refractive indices of the two layers (semiconductor layers 2 and 4) are asymmetric with respect to the light emitting layer interposed therebetween. In the refractive index distribution of asymmetric layers (semiconductor layers), the refractive index of the second layer (semiconductor layer 4) is higher than that of the first layer (semiconductor layer 2).

Claims21

Dependent claims

A self-luminous device comprising:

a first layer;
a light emitting layer overlaying the first layer;
and
a second layer overlaying the light emitting layer, wherein a two-dimensional periodic structure is formed on a surface of the second layer or on a surface of a layer overlaying the second layer, and wherein a distance between a top of the light emitting layer and a bottom of the two-dimensional periodic structure is 0.1λ to 0.3λ, or 0.3λ to λ (where λ is the wavelength of light in vacuum).

1 more element

Dependencies are inferred from the claim text.

Self-luminous device

Life of this patent

Self-luminous device

Life of this patent

Abstract

Claims21