Semiconductor light-emitting device and method of manufacturing the same

Abstract

A semiconductor light-emitting device includes: a semiconductor layer including a light-emitting region and having an emission surface on its surface; an insulating layer arranged on a surface of the semiconductor layer opposite to; a first metal layer deposited on a surface of the insulating layer opposite to a surface where the semiconductor layer is arranged; a contact portion buried in a part of the insulating layer, the contact portion electrically connecting the semiconductor layer and the first metal layer; and a second metal layer having higher reflectivity with respect to a light-emitting wavelength than the first metal layer, the second metal layer arranged on a surface of the first metal layer opposite to a surface where the insulating layer is arranged, wherein a metal of which the first metal layer is made has higher adhesion to the insulating layer than a metal of which the second layer is made.

Dependencies are inferred from the claim text.