Galvanic optocoupler and method of making

An integration process of a galvanic optocoupler of the type monolithically integrated and having at least one luminous source and one photodetector interfaced by means of a galvanic insulation layer, comprising the steps of:

• integrating a photodetector on a silicon substrate;
• depositing a galvanic insulation layer over said photodetector;
• and
• integrating a luminous source over said galvanic insulation layer,
• wherein said integration step of said photodetector realizes a phototransistor having a passivation final layer suitable for serving as galvanic insulation layer.

An optical device, comprising:

• a photodetector transistor formed on a silicon substrate;
• a galvanic insulation layer formed on the photodetector transistor and the substrate, the galvanic insulation layer forming a passivation layer of the photodetector transistor;
• and
• a source of illumination formed on top of the galvanic insulation layer in optical communication with the photodetector transistor through the galvanic insulation layer.