Display device and manufacturing method of the same

A display device being configured such that a gate signal line, an insulation film, a semiconductor layer and a conductor layer are sequentially stacked on a substrate,

• the conductor layer forms at least a drain electrode and a source electrode of a thin film transistor which are arranged with a channel region of the semiconductor layer sandwiched therebetween, the channel region overlaps the gate signal line,
• the drain electrode and the source electrode are formed in a pattern in which one of the drain electrode and the source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side such that one electrode surrounds a distal end portion of another electrode as viewed in a plan view and a projecting portion is formed on a side of the connecting portion opposite to another electrode, and
• the semiconductor layer is formed in a pattern in which the semiconductor layer forms a protruding portion which extends outwardly including a portion where at least the projecting portion is formed on the conductor layer as viewed in a plan view.

A display device being configured such that a gate signal line, an insulation film, a semiconductor layer and a conductor layer are sequentially stacked on a substrate,

• the conductor layer forms at least a drain electrode and a source electrode of a thin film transistor which are arranged with a channel region of the semiconductor layer sandwiched therebetween, the channel region overlaps the gate signal line,
• the drain electrode and the source electrode are formed in a pattern in which one of the drain electrode and the source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side such that one electrode surrounds a distal end portion of another electrode as viewed in a plan view and the connecting portion of one electrode has a large-width portion having a width larger than widths of other portions of one electrode, and
• the semiconductor layer is formed in a pattern in which the semiconductor layer forms a protruding portion which extends outwardly including a portion which includes at least the large-width portion on the conductor layer as viewed in a plan view.