Transistor, transistor circuit, electrooptical device and electronic apparatus

A transistor, comprising:

• a first gate electrode;
• a second gate electrode;
• a first gate insulating layer disposed between the first gate electrode and the second gate electrode;
• a first interlayer disposed between the first gate insulating layer and the second gate electrode and containing a first organic material;
• an organic semiconductor layer disposed between the first interlayer and the second gate electrode;
• a second interlayer disposed between the organic semiconductor layer and the second gate electrode and containing a second organic material;
• a second gate insulating layer disposed between the second interlayer and the second gate electrode;
• and
• a source electrode and a drain electrode disposed between the first interlayer and the second interlayer and injecting carriers into the organic semiconductor layer,
• an ambipolar property being imparted to a part of the organic semiconductor layer that contacts with the first interlayer and the second interlayer under an action of the first interlayer and a second interlayer.