Phase change memory device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWoong-chul Shin, Ki-joon Kim, Ji-hyun Hur, Hyo-sug Lee
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Abstract
Provided are a phase change memory device and a method of fabricating the same. The phase change memory device including a phase change layer in a storage node thereof includes: a bottom electrode; a bottom electrode contact layer formed of a phase change material disposed on the bottom electrode; a first phase change layer having a smaller width than the bottom electrode contact layer, disposed on the bottom electrode contact layer; a second phase change layer having a larger width than the first phase change layer, disposed on the first phase change layer; and a upper electrode disposed on the second phase change layer.
Claims13
A phase change memory device comprising a phase change layer in a storage node thereof, the phase change memory device comprising:
- a bottom electrode;
- a bottom electrode contact layer formed of a phase change material disposed on the bottom electrode;
- a first phase change layer having a smaller width than the bottom electrode contact layer, disposed on the bottom electrode contact layer;
- a second phase change layer having a larger width than the first phase change layer, disposed on the first phase change layer;
- and
- a upper electrode disposed on the second phase change layer.
A method of fabricating a phase change memory device comprising a phase change layer in a storage node, the method comprising:
- (a) opening a first insulating layer, and forming and planarizing a bottom electrode and a bottom electrode contact layer;
- (b) forming a second insulating layer on the first insulating layer and the bottom electrode, and forming a hole having a smaller width than the bottom electrode to expose the bottom electrode;
- (c) forming a phase change layer in the hole and on the second insulating layer;
- (d) forming a upper electrode on the phase change layer.
Dependencies are inferred from the claim text.