Plasma etching apparatus

Abstract

The present invention relates to a plasma etching apparatus, and provides a plasma etching apparatus comprising a substrate support on which a substrate is seated; an electrode disposed close to a surface of the substrate to be etched; a dielectric film formed on a surface of the electrode adjacent to the substrate; and a power supply means for generating potential difference between the electrode and the substrate support. In the apparatus, potential difference is applied between the substrate support with the substrate seated thereon and the electrode surrounding an edge region of the substrate, and a distance between the substrate and the electrode is set to 3 mm or less so as to locally generate plasma in an area between the substrate and the electrode, thereby removing particles and a thin film in the edge region of the substrate. Further, a gas acting as a curtain is injected to a central area of an upper side of the substrate to prevent plasma generated between the substrate and the electrode from being introduced into the central area of the upper side of the substrate. In addition, plasma can be generated at approximately atmospheric pressure and normal temperature.

Dependencies are inferred from the claim text.