Plasma processing apparatus component and manufacturing method thereof
AssigneeTokyo Electron Limited
InventorYusuke NAKAGAWA
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Abstract
It is intended to minimize the extent of component deterioration occurring during a dry-cleaning process while maintaining the physical characteristics of the component as a whole. Surface fluoridation processing is executed to substitute fluorine for hydrogen bonded to carbon in a surface layer t of an organic material formed in the shape of a component (e.g., a shield ring) to be disposed inside a processing chamber of a plasma processing apparatus and includes a carbon-hydrogen bond.
Claims12
A plasma processing apparatus component installed within a processing chamber of a plasma processing apparatus that executes plasma processing on a substrate placed within said processing chamber by generating plasma inside said processing chamber, wherein:
- said component is formed by executing surface fluoridation processing at a surface layer of an organic material that includes a carbon-hydrogen bond and is formed in a shape to be assumed by said component so as to substitute fluorine for the hydrogen bonded to the carbon contained in said surface layer.
A plasma processing apparatus component manufacturing method adopted when manufacturing a component installed inside a processing chamber of a plasma processing apparatus that executes plasma processing on a substrate placed inside said processing chamber by generating plasma in said processing chamber, wherein:
- energy is applied to a surface layer of an organic material that includes a carbon-hydrogen bond is formed in a specific shape and is exposed in a fluorine-containing gas atmosphere so as to substitute fluorine for the hydrogen bonded to the carbon in said surface layer.
Dependencies are inferred from the claim text.